? AUIRF7303Q v dss 30v r ds(on) max. 0.05 ?? i d 5.3a description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features ? advanced planar technology ? dual n channel mosfet ? low on-resistance ? logic level gate drive ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * 1 2015-9-30 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 5.3 a i d @ t a = 70c continuous drain current, v gs @ 10v 4.4 i dm pulsed drain current ? 44 p d @t a = 25c maximum power dissipation 2.4 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 414 e as (tested) single pulse avalanche energy (thermally limited) ? 1160 dv/dt peak diode recovery dv/dt ? 1.6 v/ns t j operating junction and -55 to + 175 c ? t stg storage temperature range mj absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient ? ??? 62.5 so-8 AUIRF7303Q base part number package type standard pack orderable part number form quantity AUIRF7303Q so-8 tape and reel 4000 AUIRF7303Qtr g d s gate drain source d1 d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
? AUIRF7303Q 2 2015-9-30 notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 118mh, r g = 50 ? , i as = 2.7a v gs =10v. part not recommended for use above this value. ?? i sd ?? 2.7a, di/dt ?? 389a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400s; duty cycle ? 2%. ? this value determined from sample failure population, t j = 25c, l = 118mh, r g = 50 ? , i as = 2.7a, v gs =10v. ? surface mounted on fr-4 board, t ?? 10sec. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.05 m ???? v gs = 10v, i d = 2.7a ? ??? ??? 0.08 v gs = 4.5v, i d = 2.1a ? v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 100a gfs forward trans conductance 5.6 ??? ??? s v ds = 15v, i d = 2.7a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 25 v ds = 24v,v gs = 0v,t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 14 21 nc ? i d = 2.7a q gs gate-to-source c harge ??? 1.5 2.3 v ds = 15v q gd gate-to-drain charge ??? 4.4 6.6 v gs = 10v ? t d(on) turn-on delay time ??? 2.9 ??? ns v dd = 15v t r rise time ??? 6.2 ??? i d = 2.7a t d(off) turn-off delay time ??? 15 ??? r g = 6.8 ?? t f fall time ??? 7.8 ??? v gs = 10v ? c iss input capacitance ??? 515 ??? pf ? v gs = 0v c oss output capacitance ??? 217 ??? v ds = 25v c rss reverse transfer capacitance ??? 90 ??? ? = 1.0mhz diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 3.0 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 44 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c,i s = 2.7a,v gs = 0v ?? t rr reverse recovery time ??? 26 39 ns t j = 25c ,i f = 2.7a, q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s ???
? AUIRF7303Q 3 2015-9-30 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v ? 60s p ulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 175c vgs top 15v 10v 7.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.3a v gs = 10v fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v vds= 6.0v i d = 2.7a
? AUIRF7303Q 4 2015-9-30 ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 175c single pulse 100s 1ms 10ms dc fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 t a , ambient temperature (c) 0 1 2 3 4 5 6 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 1800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.9a 1.4a bottom 2.7a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a fig 11. maximum effective transient thermal impedance, junction-to-ambient
? AUIRF7303Q 5 2015-9-30 fig 14a. switching time test circuit fig 14b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 13a. unclamped inductive test circuit fig 13b. unclamped inductive waveforms t p v (br)dss i as vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 12. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets
? AUIRF7303Q 6 2015-9-30 ? so-8 part marking information so-8 package outline (dimensions are shown in millimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. n o tes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: millimeter 3. dimensions are shown in millimeters [inches]. 5 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. 6 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 d im en sio n is th e len g th o f lead fo r so ld erin g to a s u b s t r a t e . m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070]
? AUIRF7303Q 7 2015-9-30 so-8 tape and reel ( dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541.
? AUIRF7303Q 8 2015-9-30 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model class m2 (+/- 150v) ? aec-q101-002 human body model ? class h1a (+/- 500v) ? aec-q101-001 charged device model class c5 (+/- 1500v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/30/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 3/4/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated data sheet with new ir corporate template ? highest passing voltage.
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